i o = 500 ma v r = 40 vo lt s CDBF0540 smd schottky barrier diode smd schottky barrier diode (lead-free device) features designed for mounting on small surface. extremely thin/leadless package. majority carrier conduction. mechanical data case: sod-323f (2512) standard package , molded plastic. t erminals: gold plated, solderable per mil-std-750, method 2026. polarity: indicated by cathode band. mounting position: any . weight: 0.006 gram (approximately). low forward voltage 8.3 ms single half sine-wave superimposed on rate load ( jedec method ) typ min -40 -40 parameter repetitive peak reverse voltage reverse voltage forward current , surge peak storage temperature junction temperature average forward rectified current conditions symbol v rrm v r io i fsm t stg t j max 40 40 500 5.5 +125 +125 unit v v ma a c c maximum rating ( at t a = 25 c unless otherwise noted ) conditions if = 0.5 a @ta=25 c if = 1 a @ta=25 c vr = 20 v @ ta= 25 c vr = 40 v @ ta= 25 c vr = 20 v @t a=100 c vr = 40 v @t a=100 c f = 1mhz, and 0 vdc reverse voltage if = 0.5 a @ta=100 c if = 1 a @ta=100 c i f =i r =10ma,irr= 0.1 x i r ,r l =100 ohm unit v v v v ua ua ma ma pf ns parameter forward voltage reverse current capacitance between terminals reverse recovery time symbol v f v f v f v f i r i r i r i r c t t rr min typ 22 max 0.51 0.64 0.46 0.62 10 20 2 5 170 electrical characteristics ( at t a = 25 c unless otherwise noted ) page 1 rev:a qw-a1040 0.1 02( 2.6 0) 0.0 95( 2.4 0) 0.0 21( 0.5 5) ty p. 0.0 51( 1.3 0) 0.0 43( 1.1 0) 0.0 35( 0.9 0) 0.0 27( 0.7 0) dim en sio ns in in ch es an d ( mi llim ete r) 10 05 (2 51 2) 0.0 12 ( 0.3 0) ty p. 0.0 39( 1.0 0) ty p. s m d d io d e s s p e c ia li s t comchip
rating and characteristic curves (CDBF0540) f o r w a r d c u r r e n t ( m a ) fig. 1 - forw ard cha racte ristic s for war d vol tag e (v) smd schottky barrier diode smd schottky barrier diode a v e r a g e f o r w a r d c u r r e n t ( % ) ambient temperature ( c ) fig. 4 - curre nt d erating curve reverse voltage (v) c a p a c i t a n c e b e t w e e n t e r m i n a l s ( p f ) 0 5 10 15 20 20 40 60 80 100 120 0 f=1mhz ta = 25 c fig. 3 - cap acita nce bet ween te rmina ls chara cteris tics 0 20 40 120 100 80 60 150 125 100 75 50 25 0 reverse voltage (v) r e v e r s e c u r r e n t ( a ) -2 5 c 2 5 c 7 5 c 1n 10n 100n 1u 10u 100u 1m 10 20 30 10m 40 0 1 2 5 c fig. 2 - rev erse ch aract eristi cs 0. 1 1 10 10 0 10 00 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 7 0. 6 0 s m d d io d e s s p e c ia li s t comchip page 2 rev:a qw-a1040
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